Yogthos<p>Fudan University researchers create non-volatile flash memory with write speed of 400 picoseconds. This breakthrough bridges the gap between volatile and non-volatile memory speeds. By replacing silicon with 2D Dirac graphene, the team leveraged ballistic charge transport to achieve unprecedented performance. Its picosecond speed and ultra-low energy use could finally eliminate the memory bottleneck, marking a quantum leap for next-gen computing. </p><p><a href="https://interestingengineering.com/innovation/china-worlds-fastest-flash-memory-device" rel="nofollow noopener noreferrer" target="_blank"><span class="invisible">https://</span><span class="ellipsis">interestingengineering.com/inn</span><span class="invisible">ovation/china-worlds-fastest-flash-memory-device</span></a></p><p><a href="https://social.marxist.network/tags/china" class="mention hashtag" rel="nofollow noopener noreferrer" target="_blank">#<span>china</span></a> <a href="https://social.marxist.network/tags/technology" class="mention hashtag" rel="nofollow noopener noreferrer" target="_blank">#<span>technology</span></a></p>